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IGLT65R110D2ATMA1

Name: Infineon IGLT65R110D2ATMA1
Brand: Infineon Technologies
SKU: 726-IGLT65R110D2ATMA
Price: 3.78 EUR
Availability: InStock

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Mouser No:

726-IGLT65R110D2ATMA

Mfr. No:

IGLT65R110D2ATMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs HV GAN DISCRETES

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGLT65R110D2ATMA1 Datasheet (PDF)

ECAD Model:

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Learn more about Infineon Technologies IGLT65R110D2ATMA1

In Stock: 1.657

Stock:: 1.657 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,78 €	3,78 €
	2,52 €	25,20 €
	1,94 €	194,00 €
	1,72 €	860,00 €
	1,48 €	1.480,00 €
Full Reel (Order in multiples of 1800)
	1,42 €	2.556,00 €
	1,38 €	4.968,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	15 A
Rds On - Drain-Source Resistance:	140 mOhms
Vgs - Gate-Source Voltage:	- 10 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	3.4 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Packaging:	Reel
Packaging:	Cut Tape
Product:	Power Transistors
Product Type:	GaN FETs
Factory Pack Quantity:	1800
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	GaN Transistor

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Datasheet

IGLT65R110D2ATMA1 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.