IGLT65R110D2ATMA1

Infineon Technologies
726-IGLT65R110D2ATMA
IGLT65R110D2ATMA1

Mfr.:

Description:
GaN FETs HV GAN DISCRETES

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Infineon Technologies IGLT65R110D2ATMA1

In Stock: 1.621

Stock:
1.621 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,72 € 3,72 €
2,40 € 24,00 €
1,82 € 182,00 €
1,61 € 805,00 €
1,55 € 1.550,00 €
Full Reel (Order in multiples of 1800)
1,38 € 2.484,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: GaN FETs
RoHS:  
SMD/SMT
HEMT
1 Channel
650 V
15 A
140 mOhms
- 10 V
1.6 V
3.4 nC
- 40 C
+ 150 C
Enhancement
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: MY
Country of Diffusion: AT
Country of Origin: AT
Packaging: Reel
Packaging: Cut Tape
Product: Power Transistors
Product Type: GaN FETs
Factory Pack Quantity: 1800
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 N-Channel
Type: GaN Transistor
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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