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IGLT65R035D2ATMA1

Name: Infineon IGLT65R035D2ATMA1
Brand: Infineon Technologies
SKU: 726-IGLT65R035D2ATMA
Price: 9.13 EUR
Availability: OutOfStock

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Mouser No:

726-IGLT65R035D2ATMA

Mfr. No:

IGLT65R035D2ATMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs HV GAN DISCRETES

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGLT65R035D2ATMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IGLT65R035D2ATMA1

Availability

Stock:: 0

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On Order:: 1.788

Expected 7/2/2026
Factory Lead Time:: 18

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	9,13 €	9,13 €
	6,33 €	63,30 €
	4,85 €	485,00 €
	4,12 €	4.120,00 €
Full Reel (Order in multiples of 1800)
	4,12 €	7.416,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Rds On - Drain-Source Resistance:	42 mOhms
Vgs - Gate-Source Voltage:	- 10 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Output Power:	152 W
Packaging:	Reel
Packaging:	Cut Tape
Product:	Power Transistors
Product Type:	GaN FETs
Factory Pack Quantity:	1800
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	GaN Transistor

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Datasheet

IGLT65R035D2ATMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.