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IGLR65R200D2XUMA1

Name: Infineon IGLR65R200D2XUMA1
Brand: Infineon Technologies
SKU: 726-IGLR65R200D2XUMA
Price: 2.44 EUR
Availability: InStock

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Mouser No:

726-IGLR65R200D2XUMA

Mfr. No:

IGLR65R200D2XUMA1

Mfr.:

Infineon Technologies

Description:

GaN FETs HV GAN DISCRETES

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IGLR65R200D2XUMA1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IGLR65R200D2XUMA1

In Stock: 4.825

Stock:: 4.825 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,44 €	2,44 €
	1,49 €	14,90 €
	1,06 €	106,00 €
	0,886 €	443,00 €
	0,827 €	827,00 €
	0,80 €	2.000,00 €
Full Reel (Order in multiples of 5000)
	0,703 €	3.515,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Transistor Polarity:	HEMT
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	9.2 A
Rds On - Drain-Source Resistance:	240 mOhms
Vgs - Gate-Source Voltage:	- 10 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	1.8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	33 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Product:	Power Transistors
Product Type:	GaN FETs
Factory Pack Quantity:	5000
Subcategory:	Transistors
Technology:	GaN
Transistor Type:	1 N-Channel
Type:	GaN Transistor

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Datasheet

IGLR65R200D2XUMA1 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolGaN™ 600V GIT HEMTs

Infineon Technologies CoolGaN™ 600V Gate Injection Technology (GIT) High-Electron-Mobility Transistors (HEMTs) offer fast turn-on and turn-off speeds at minimum switching losses. These GaN enhancement-mode power transistors are available in a ThinPAK 5x6 surface-mount package, ideal for applications that require a compact device without a heatsink. The small 5mm x 6mm² footprint and low 1mm profile height makes the Infineon Technologies CoolGaN™ 600V GIT HEMTs perfect for achieving high power density.

CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.