IDD08SG60CXTMA2

Infineon Technologies
726-IDD08SG60CXTMA2
IDD08SG60CXTMA2

Mfr.:

Description:
SiC Schottky Diodes SIC DIODES

Datasheet:
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In Stock: 5.043

Stock:
5.043 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 5043 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,93 € 3,93 €
2,61 € 26,10 €
1,85 € 185,00 €
1,76 € 880,00 €
1,60 € 1.600,00 €
Full Reel (Order in multiples of 2500)
1,60 € 4.000,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: SiC Schottky Diodes
RoHS:  
SMD/SMT
TO-252-3
Single
8 A
600 V
1.8 V
42 A
600 nA
- 55 C
+ 175 C
XDD08SG60
Reel
Cut Tape
Brand: Infineon Technologies
Country of Assembly: MY
Country of Diffusion: AT
Country of Origin: AT
Pd - Power Dissipation: 100 W
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 2500
Subcategory: Diodes & Rectifiers
Tradename: CoolSiC
Vr - Reverse Voltage: 600 V
Part # Aliases: IDD08SG60C SP001632510
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CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

600V CoolSiC™ Schottky Diodes

Infineon 600V CoolSiC™ Schottky Diodes feature low device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. These devices are available in the TO-220 and D2PAK packages. The small form factor of the DPAK makes it particularly interesting for high-power density surface mount designs. The introduction of the DPAK further extends Infineon's product offering to account for different customer needs.

Silicon Carbide CoolSiC™ MOSFETs & Diodes

Infineon Silicon Carbide CoolSiC™ MOSFETs and Diodes provide a portfolio that addresses the need for smarter, more efficient energy generation, transmission, and consumption. The CoolSiC portfolio addresses customers’ needs for reduced system size and cost in mid- to high-power systems while meeting the highest quality standards, providing a long system lifetime, and guaranteeing reliability. With CoolSiC, customers will reach the most stringent efficiency targets while seeing a drop in operational system costs. The portfolio is comprised of CoolSiC Schottky diodes, CoolSiC hybrid modules, CoolSiC MOSFET modules, and discrete, plus EiceDRIVER™ gate driver ICs for driving Silicon Carbide devices.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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