GS66508T-E01-TY

Images are for reference only
See Product Specifications

Mouser No:

499-GS66508T-E01-TY

Mfr. No:

GS66508T-E01-TY

Mfr.:

Infineon Technologies

Lifecycle:

Obsolete

Datasheet:

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

Shipping Alert:

Mouser does not presently sell this product in your region.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	GaNPX-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	55 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	1.6 V
Qg - Gate Charge:	6.5 nC
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Moisture Sensitive:	Yes
Packaging:	Tray
Product Type:	GaN FETs
Series:	GS66508
Factory Pack Quantity:	1
Subcategory:	Transistors
Technology:	GaN
Unit Weight:	4,675 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Compliance Codes

Origin Classifications

The country is subject to change at the time of shipment.