It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

GS66504B-MR

Name: Infineon GS66504B-MR
Brand: Infineon Technologies
SKU: 499-GS66504B-MR
Price: 12.58 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

499-GS66504B-MR

Mfr. No:

GS66504B-MR

Mfr.:

Infineon Technologies

Description:

GaN FETs LEGACY GAN SYSTEMS

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

GS66504B-MR Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies GS66504B-MR

In Stock: 3.231

Stock:: 3.231 Can Dispatch Immediately

An unexpected error occurred. Please try again later.

Quantities greater than 3231 will be subject to minimum order requirements.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 250)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	12,58 €	12,58 €
	9,39 €	93,90 €
	8,12 €	812,00 €
Full Reel (Order in multiples of 250)
	8,12 €	2.030,00 €
	7,69 €	3.845,00 €
	6,54 €	6.540,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:

GS66504B-TR

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

12,59 €

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	GaNpx
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	15 A
Rds On - Drain-Source Resistance:	130 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	3.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	GaNPX
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Development Kit:	GS665MB-EVB, GS-EVB-ACDC-300W-ON
Maximum Operating Frequency:	10 MHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Series:	GS665xx
Factory Pack Quantity:	250
Subcategory:	Transistors
Technology:	GaN-on-Si
Transistor Type:	E-Mode
Part # Aliases:	GS66504B-E01-MR
Unit Weight:	14,594 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

GS66504B-MR Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-7-22 (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

GS665xx Enhancement-Mode Silicon Power Transistors

Infineon Technologies GS665xx Enhancement-Mode High Electron Mobility Transistors (E-HEMT) feature high current, high voltage breakdown, and high switching frequency. These power transistors include Island Technology cell layout with high-current die and high yield, and GaNPX^® small packaging enables low inductance and low thermal resistance. These power transistors offer very low junction-to-case thermal resistance for high-power applications. The GS665xx enhancement-mode silicon power transistors are available as bottom-sided or top-sided cooled transistors. These power transistors provide ultra-low FOM die, reverse current capability, and zero reverse recovery loss.