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GS61008T-MR

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See Product Specifications

Mouser No:

499-GS61008T-MR

Mfr. No:

GS61008T-MR

Mfr.:

Infineon Technologies

Description:

GaN FETs LEGACY GAN SYSTEMS

Lifecycle:

Obsolete

Datasheet:

GS61008T-MR Datasheet (PDF)

ECAD Model:

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Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

IGC033S10S1XTMA1

Description:

GaN FETs MV GAN DISCRETES

Lifecycle:

New Product: New from this manufacturer.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	GaNpx
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	90 A
Rds On - Drain-Source Resistance:	9.5 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 7 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	8 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Channel Mode:	Enhancement
Tradename:	GaNPX
Brand:	Infineon Technologies
Configuration:	Single
Development Kit:	GS61008P-EVBHF
Maximum Operating Frequency:	10 MHz
Minimum Operating Frequency:	0 Hz
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	GaN FETs
Series:	GS6100x
Factory Pack Quantity:	250
Subcategory:	Transistors
Technology:	GaN-on-Si
Transistor Type:	E-Mode
Part # Aliases:	GS61008T-E01-MR
Unit Weight:	3 g

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Filter Document:

Datasheet

GS61008T-MR Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-7-22 (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Taiwan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

GS6100x 100V E-HEMT Transistors

Infineon Technologies GS6100x 100V E-HEMT Transistors are enhancement mode GaN-on-Silicon power devices. These transistors feature GaN properties that offer high current, voltage breakdown, and switching frequency. The GS6100x transistors use Island Technology® cell layout to provide a high-current die and high yield. The devices also feature GaNPX® packaging with low conductance and low thermal resistance in a small package. The GS6100x transistors provide very low junction-to-case thermal resistance for high-power applications. All these features are combined to offer very high-efficiency power switching.