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FZ2000R33HE4BOSA1

Name: Infineon FZ2000R33HE4BOSA1
Brand: Infineon Technologies
SKU: 726-FZ2000R33HE4BOSA
Price: 2307.23 EUR
Availability: OutOfStock

Mouser No:

726-FZ2000R33HE4BOSA

Mfr. No:

FZ2000R33HE4BOSA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules IHV IHM T

Datasheet:

FZ2000R33HE4BOSA1 Datasheet (PDF)

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Factory Lead Time:: 26 Weeks Estimated factory production time.

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Pricing (EUR)

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	2.307,23 €	2.307,23 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:
Product:	IGBT Silicon Modules
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	3.3 kV
Collector-Emitter Saturation Voltage:	2.2 V
Continuous Collector Current at 25 C:	2 kA
Gate-Emitter Leakage Current:	400 nA
Pd - Power Dissipation:	4.2 MW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Product Type:	IGBT Modules
Series:	Trenchstop IGBT4 - E4
Factory Pack Quantity:	1
Subcategory:	IGBTs
Technology:	Si
Tradename:	TRENCHSTOP
Part # Aliases:	FZ2000R33HE4 SP003062218

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Datasheet

FZ2000R33HE4BOSA1 Datasheet (PDF)

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TARIC:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

FZ2000R33HE4 & FZ1400R33HE4 3300V IGBT Modules

Infineon Technologies FZ2000R33HE4 and FZ1400R33HE4 3300V Single-Switch IGBT Modules offer TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diodes. Insulated-gate bipolar transistors are three-terminal power semiconductor devices used as electronic switches to combine high efficiency and fast switching. FZ2000R33HE4 is a 2000A 190mm single-switch module. FZ1400R33HE4 is a 1400A 130mm single-switch module. The devices offer high short-circuit capability and current density with low switching losses. Applications include high-power converters, medium-voltage converters, and motor and traction drives.