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FS50R12N2T7B15BPSA2

Name: Infineon FS50R12N2T7B15BPSA2
Brand: Infineon Technologies
SKU: 726-FS50R12N2T7B15B2
Price: 51.43 EUR
Availability: InStock

Mouser No:

726-FS50R12N2T7B15B2

Mfr. No:

FS50R12N2T7B15BPSA2

Mfr.:

Infineon Technologies

Description:

IGBT Modules 1200 V, 50 A sixpack IGBT module

Datasheet:

FS50R12N2T7B15BPSA2 Datasheet (PDF)

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Learn more about Infineon Technologies FS50R12N2T7B15BPSA2

In Stock: 15

Stock:: 15 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	51,43 €	51,43 €
	45,24 €	452,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
Product:	IGBT Silicon Modules
Configuration:	6-Pack
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.5 V
Continuous Collector Current at 25 C:	50 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	Infineon Technologies
Product Type:	IGBT Modules
Factory Pack Quantity:	15
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	FS50R12N2T7_B15 SP005612508

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Datasheet

FS50R12N2T7B15BPSA2 Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Hungary
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

1200V Sixpack IGBT Modules

Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.