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FS150R12N3T7BPSA1

Name: Infineon FS150R12N3T7BPSA1
Brand: Infineon Technologies
SKU: 726-FS150R12N3T7BPS1
Price: 100.57 EUR
Availability: InStock

Mouser No:

726-FS150R12N3T7BPS1

Mfr. No:

FS150R12N3T7BPSA1

Mfr.:

Infineon Technologies

Description:

IGBT Modules LOW POWER ECONO

Datasheet:

FS150R12N3T7BPSA1 Datasheet (PDF)

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Learn more about Infineon Technologies FS150R12N3T7BPSA1

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	100,57 €	100,57 €
	82,18 €	821,80 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
RoHS:
Product:	IGBT Silicon Modules
Configuration:	6-Pack
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.55 V
Continuous Collector Current at 25 C:	150 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	Infineon Technologies
Product Type:	IGBT Modules
Series:	FSXR12N3X7G
Factory Pack Quantity:	10
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	FS150R12N3T7 SP004145224

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Datasheet

FS150R12N3T7BPSA1 Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

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Compliance Codes

TARIC:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
MXHTS:: 8541210100
ECCN:: EAR99

Origin Classifications

Country of Origin:: Hungary
Assembly Country of Origin:: Hungary
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

1200V Sixpack IGBT Modules

Infineon 1200V Sixpack IGBT Modules are EasyPACK™ 1B sixpack IGBT modules with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode, and NTC technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V Sixpack IGBT Modules.