FP50R12N2T7PB11BPSA1

Infineon Technologies
726-FP50R12N2T7PB111
FP50R12N2T7PB11BPSA1

Mfr.:

Description:
IGBT Modules 1200 V, 50 A PIM IGBT module

Datasheet:
ECAD Model:
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Learn more about Infineon Technologies FP50R12N2T7PB11BPSA1

In Stock: 10

Stock:
10 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
76,82 € 76,82 €
62,03 € 620,30 €
53,57 € 5.357,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBT Modules
IGBT Silicon Modules
3-Phase Inverter
1.2 kV
1.5 V
50 A
100 nA
- 40 C
+ 175 C
Tray
Brand: Infineon Technologies
Maximum Gate Emitter Voltage: 20 V
Mounting Style: Through Hole
Product Type: IGBT Modules
Factory Pack Quantity: 10
Subcategory: IGBTs
Technology: Si
Part # Aliases: FP50R12N2T7P_B11 SP005595806
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Attributes selected: 0

Datasheet

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TARIC:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
MXHTS:
8541210100
ECCN:
EAR99

1200V PIM IGBT Modules

Infineon 1200V PIM IGBT Modules offer TRENCHSTOP™ IGBT7 and EC7 diode technology based on the latest micro-pattern trenches technology. This technology strongly reduces losses and provides a high level of controllability. The cell concept is characterized by implementing parallel trench cells separated by sub-micron mesas compared to the formerly used square trench cells. The chip is specially optimized for industrial drive applications and solar energy systems, which means much lower static losses, higher power density, and softer switching. A significant increase in power density can be obtained by raising the allowed maximum operating temperature up to 175°C in the Infineon 1200V PIM IGBT Modules.

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