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BSP613P L6327

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See Product Specifications

Mouser No:

726-BSP613PL6327

Mfr. No:

BSP613P L6327

Mfr.:

Infineon Technologies

Lifecycle:

Obsolete

Datasheet:

ECAD Model:

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Shipping Alert:

Mouser does not presently sell this product in your region.

Mfr.:

Infineon Technologies

Mfr. No:

BSP613PH6327XTSA1

Description:

MOSFETs P-Ch -60V -2.9A SOT-223-3

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	GaN FETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	SOT-223-4
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	2.9 A
Rds On - Drain-Source Resistance:	130 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.8 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	9 ns
Moisture Sensitive:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	MOSFET Small Signals
Product Type:	GaN FETs
Rise Time:	9 ns
Series:	BSP613
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	26 ns
Typical Turn-On Delay Time:	6.7 ns
Part # Aliases:	BSP613PL6327HUSA1
Unit Weight:	112 mg