BSC320N20NS3 G

Infineon Technologies
726-BSC320N20NS3G
BSC320N20NS3 G

Mfr.:

Description:
MOSFETs N-Ch 200V 36A TDSON-8 OptiMOS 3

ECAD Model:
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In Stock: 5.782

Stock:
5.782 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 5782 will be subject to minimum order requirements.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 5000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
2,78 € 2,78 €
1,80 € 18,00 €
1,28 € 128,00 €
1,08 € 540,00 €
0,998 € 998,00 €
0,929 € 2.322,50 €
Full Reel (Order in multiples of 5000)
0,929 € 4.645,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Alternative Packaging

Mfr. Part No.:
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
2,67 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
TDSON-8
N-Channel
1 Channel
200 V
36 A
32 mOhms
- 20 V, 20 V
4 V
22 nC
- 55 C
+ 150 C
125 W
Enhancement
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Configuration: Single
Fall Time: 4 ns
Forward Transconductance - Min: 29 S
Product Type: MOSFETs
Rise Time: 9 ns
Factory Pack Quantity: 5000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 22 ns
Typical Turn-On Delay Time: 14 ns
Part # Aliases: SP000676410 BSC32N2NS3GXT BSC320N20NS3GATMA1
Unit Weight: 100 mg
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Compliance Codes
TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Austria
Assembly Country of Origin:
China
Country of Diffusion:
Austria
The country is subject to change at the time of shipment.

CoolMOS™ N-Channel MOSFETs

Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.