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BSC018NE2LSIXT

Name: Infineon BSC018NE2LSIXT
Brand: Infineon Technologies
SKU: 726-BSC018NE2LSIATMA
Price: 0.41 EUR
Availability: Discontinued

Images are for reference only
See Product Specifications

Mouser No:

726-BSC018NE2LSIATMA

Mfr. No:

BSC018NE2LSIXT

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

BSC018NE2LSIXT Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies BSC018NE2LSIXT

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 26 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 5000 Multiples: 5000

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 5000)
	0,411 €	2.055,00 €

Alternative Packaging

Mfr. Part No.:

BSC018NE2LSI

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,41 €

Min:

Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

BSC018NE2LSI

Description:

MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS

Lifecycle:

End of Life: Scheduled for obsolescence and will be discontinued by the manufacturer.

Compare With Current Part

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	1.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	48 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	69 W
Channel Mode:	Enhancement
Tradename:	OptiMOS
Packaging:	Reel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	3.6 ns
Forward Transconductance - Min:	65 S
Product Type:	MOSFETs
Rise Time:	4.8 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	24 ns
Typical Turn-On Delay Time:	5.2 ns
Part # Aliases:	SP000906030 BSC018NE2LSIATMA1

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Filter Document:

Datasheet

BSC018NE2LSIXT Datasheet (PDF)

Product Catalogs

Infineon's Latest Power and Sensing Guide (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

20V-60V OptiMOS Power MOSFETs

Infineon's 20V-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar microinverter), power supply (e.g. server and telecom), and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency, and lower cost.