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BSC014NE2LSIXT

Name: Infineon BSC014NE2LSIXT
Brand: Infineon Technologies
SKU: 726-BSC014NE2LSIATMA
Price: 0.51 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

726-BSC014NE2LSIATMA

Mfr. No:

BSC014NE2LSIXT

Mfr.:

Infineon Technologies

Description:

MOSFETs N-Ch 25V 100A TDSON-8 OptiMOS

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

BSC014NE2LSIXT Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies BSC014NE2LSIXT

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 52 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 5000 Multiples: 5000

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 5000)
	0,515 €	2.575,00 €

Alternative Packaging

Mfr. Part No.:

BSC014NE2LSI

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,87 €

Min:

Mfr. Part No.:

BSC014NE2LSIATMA1

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

1,72 €

Min:

Similar Product

Mfr.:

Infineon Technologies

Mfr. No:

BSC014N04LSATMA1

Description:

MOSFETs N-Ch 40V 100A TDSON-8 FL OptiMOS

Compare With Current Part

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TDSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	100 A
Rds On - Drain-Source Resistance:	1.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.2 V
Qg - Gate Charge:	52 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	74 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	OptiMOS
Packaging:	Reel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	CN
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	3.6 ns
Forward Transconductance - Min:	70 S
Product Type:	MOSFETs
Rise Time:	5 ns
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	25 ns
Typical Turn-On Delay Time:	5 ns
Part # Aliases:	SP000911336 BSC014NE2LSIATMA1
Unit Weight:	106,400 mg