BFR 740L3RH E6327

Infineon Technologies
726-BFR740L3RHE6327
BFR 740L3RH E6327

Mfr.:

Description:
RF Bipolar Transistors NPN Silicn Germanium RF Transistor

Datasheet:
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Learn more about Infineon Technologies BFR 740L3RH E6327

In Stock: 14.634

Stock:
14.634 Can Dispatch Immediately
Factory Lead Time:
39 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 15000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
1,20 € 1,20 €
0,759 € 7,59 €
0,503 € 50,30 €
0,397 € 198,50 €
0,359 € 359,00 €
0,329 € 822,50 €
0,297 € 1.485,00 €
0,294 € 2.940,00 €
Full Reel (Order in multiples of 15000)
0,294 € 4.410,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
BFR740L3RHE6327XTSA1
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
0,48 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: RF Bipolar Transistors
RoHS:  
BFR740L3
Bipolar
SiGe
NPN
- 65 C
+ 150 C
Single
TSLP
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Pd - Power Dissipation: 160 mW
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 15000
Subcategory: Transistors
Part # Aliases: SP000252393 BFR74L3RHE6327XT BFR740L3RHE6327XTSA1
Unit Weight: 0,500 mg
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Attributes selected: 0

Datasheet

Product Catalogs

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TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
8541210101
KRHTS:
8541219000
MXHTS:
85412101
ECCN:
EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

RF Solutions for IoT applications

Infineon Technologies RF Solutions portfolio delivers high-performance RF technology products for reliable wireless connectivity in IoT applications. The number of IoT devices is growing at an astonishing rate. At the same time, customers expect a superior user experience in terms of product design and functionality.

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