BFP840ESDH6327XTSA1

Infineon Technologies
726-BFP840ESDH6327XT
BFP840ESDH6327XTSA1

Mfr.:

Description:
RF Bipolar Transistors RF BIP TRANSISTORS

Datasheet:
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Learn more about Infineon Technologies BFP840ESDH6327XTSA1

In Stock: 8.045

Stock:
8.045 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,439 € 0,44 €
0,274 € 2,74 €
0,222 € 22,20 €
0,212 € 106,00 €
0,203 € 203,00 €
Full Reel (Order in multiples of 3000)
0,192 € 576,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Alternative Packaging

Mfr. Part No.:
BFP 840ESD H6327
Packaging:
Reel, Cut Tape, MouseReel
Availability:
In Stock
Price:
0,84 €
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: RF Bipolar Transistors
RoHS:  
BFP840ESD
Bipolar
SiGe
80 GHz
2.25 V
2.9 V
35 mA
- 55 C
+ 150 C
Single
SMD/SMT
SOT-343-4
Reel
Cut Tape
MouseReel
Brand: Infineon Technologies
Country of Assembly: CN
Country of Diffusion: DE
Country of Origin: DE
Pd - Power Dissipation: 75 mW
Product Type: RF Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: BFP 840ESD H6327 SP000943010
Unit Weight: 6,400 mg
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TARIC:
8541290000
CNHTS:
8541210000
CAHTS:
8541290000
USHTS:
8541210075
JPHTS:
8541290100
KRHTS:
8541219000
MXHTS:
85412999
ECCN:
EAR99

RF Transistors

Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

BFPx4 RF Transistors

Infineon BFPx4 RF Transistors provide the designer the best possible performance, superior flexibility and price/performance ratio. These are widely used for new emerging wireless applications, where the system specification is not yet firmly established. The BFxx Low Noise Amplifiers (LNAs) include devices suitable for use from AM over VHF/UHF up to 14GHz. These are the latest LNA innovations based on Infineon's reliable high volume 80GHz fT silicon germanium carbon (SiGe:C) heterojunction bipolar technology. They combine uncompromised RF performance with outstanding robustness against high RF input power overdrive and ESD.

RF Solutions for IoT applications

Infineon Technologies RF Solutions portfolio delivers high-performance RF technology products for reliable wireless connectivity in IoT applications. The number of IoT devices is growing at an astonishing rate. At the same time, customers expect a superior user experience in terms of product design and functionality.

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