2EDN8524RXTMA1

Infineon Technologies
726-2EDN8524RXTMA1
2EDN8524RXTMA1

Mfr.:

Description:
Gate Drivers LOW SIDE DRIVERS

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about Infineon Technologies 2EDN8524RXTMA1

In Stock: 2.077

Stock:
2.077
Can Dispatch Immediately
On Order:
5.000
Expected 7/9/2026
Factory Lead Time:
39
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,937 € 0,94 €
0,676 € 6,76 €
0,611 € 15,28 €
0,539 € 53,90 €
0,505 € 126,25 €
0,484 € 242,00 €
0,472 € 472,00 €
0,46 € 1.150,00 €
Full Reel (Order in multiples of 5000)
0,438 € 2.190,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
IGBT, MOSFET Gate Drivers
Low-Side
SMD/SMT
TSSOP-8
2 Driver
2 Output
5 A
4.5 V
20 V
Non-Inverting
5.3 ns
4.5 ns
- 40 C
+ 150 C
Reel
Cut Tape
Brand: Infineon Technologies
Input Voltage - Max: 20 V
Input Voltage - Min: - 5 V
Logic Type: TTL
Operating Supply Current: 700 uA
Product Type: Gate Drivers
Propagation Delay - Max: 23 ns
Rds On - Drain-Source Resistance: 1 Ohms
Factory Pack Quantity: 5000
Subcategory: PMIC - Power Management ICs
Technology: GaN
Part # Aliases: 2EDN8524R SP001584368
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

Product Catalogs

Compliance Codes
USHTS:
8542310075
ECCN:
EAR99
Origin Classifications
Country of Origin:
Germany
Assembly Country of Origin:
China
Country of Diffusion:
Germany
The country is subject to change at the time of shipment.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.