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IXXP12N65B4D1

Name: IXYS IXXP12N65B4D1
Brand: IXYS
SKU: 747-IXXP12N65B4D1
Price: 5.09 EUR
Availability: OutOfStock

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Mouser No:

747-IXXP12N65B4D1

Mfr. No:

IXXP12N65B4D1

Mfr.:

IXYS

Description:

IGBTs Disc IGBT XPT-GenX4 TO-220AB/FP

Datasheet:

IXXP12N65B4D1 Datasheet

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: Request Delivery Quote

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,09 €	5,09 €
	3,34 €	33,40 €
	2,48 €	248,00 €
	2,08 €	1.040,00 €
	1,93 €	1.930,00 €
	1,81 €	4.525,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-220-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.95 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	38 A
Pd - Power Dissipation:	160 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Series:	Trench - 650V - 1200V GenX31
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	38 A
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	50
Subcategory:	IGBTs
Tradename:	XPT

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Datasheet

IXXP12N65B4D1 Datasheet

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Compliance Codes

TARIC:: 8541290000
USHTS:: 8541290095
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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