IXTY1R6N100D2

IXYS
747-IXTY1R6N100D2
IXTY1R6N100D2

Mfr.:

Description:
MOSFETs N-CH MOSFETS (D2) 1000V 1.6A

ECAD Model:
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In Stock: 66

Stock:
66
Can Dispatch Immediately
On Order:
3.010
Expected 7/20/2026
3.150
Expected 11/16/2026
Factory Lead Time:
27
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,34 € 4,34 €
2,91 € 29,10 €
2,29 € 160,30 €
2,03 € 1.136,80 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
1 kV
1.6 A
10 Ohms
- 20 V, 20 V
4.5 V
27 nC
- 55 C
+ 150 C
100 W
Depletion
Tube
Brand: IXYS
Configuration: Single
Fall Time: 41 ns
Forward Transconductance - Min: 0.65 S
Product Type: MOSFETs
Rise Time: 65 ns
Series: IXTY1R6N100
Factory Pack Quantity: 70
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 27 ns
Unit Weight: 330 mg
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Compliance Codes
TARIC:
8541900000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
8541900299
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

D2 Series N-Channel Depletion Mode Power MOSFETs

IXYS D2 Series 100V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a normally "on" mode, requiring zero turn-on voltage at the gate terminal. IXYS D2 series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously “on," like emergency or burglar alarms.