It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXTQ96N25T

Name: IXYS IXTQ96N25T
Brand: IXYS
SKU: 747-IXTQ96N25T
Price: 4.26 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXTQ96N25T

Mfr. No:

IXTQ96N25T

Mfr.:

IXYS

Description:

MOSFETs 96 Amps 250V 36 Rds

Datasheet:

IXTQ96N25T Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXTQ96N25T

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 23 Weeks Estimated factory production time.

Enter Quantity:

Minimum: 300 Multiples: 30

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,26 €	1.278,00 €
	4,10 €	2.091,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3P-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	96 A
Rds On - Drain-Source Resistance:	29 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	114 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	625 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	28 ns
Product Type:	MOSFETs
Rise Time:	22 ns
Series:	IXTQ96N25
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	59 ns
Typical Turn-On Delay Time:	20 ns
Unit Weight:	5,500 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXTQ96N25T Datasheet

PCN

Product Change Notification (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.