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IXTQ88N30P

Name: IXYS IXTQ88N30P
Brand: IXYS
SKU: 747-IXTQ88N30P
Price: 14.58 EUR
Availability: InStock

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Mouser No:

747-IXTQ88N30P

Mfr. No:

IXTQ88N30P

Mfr.:

IXYS

Datasheet:

ECAD Model:

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More Information

Stock:: 385 Can Dispatch Immediately

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3P-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	88 A
Rds On - Drain-Source Resistance:	40 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	180 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	600 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	25 ns
Product Type:	MOSFETs
Rise Time:	24 ns
Series:	IXTQ88N30
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	96 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	5,500 g