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IXTQ48N65X2M

Name: IXYS IXTQ48N65X2M
Brand: IXYS
SKU: 747-IXTQ48N65X2M
Price: 6.33 EUR
Availability: OutOfStock

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Mouser No:

747-IXTQ48N65X2M

Mfr. No:

IXTQ48N65X2M

Mfr.:

IXYS

Description:

MOSFETs Discrete MOSFET 48A 650V X2 TO3P FP

Datasheet:

IXTQ48N65X2M Datasheet (PDF)

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 27 Weeks Estimated factory production time.

Long lead time reported on this product.

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Minimum: 300 Multiples: 30

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,33 €	1.899,00 €
	6,30 €	3.213,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3PFP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	48 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	76 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	70 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	15 ns
Forward Transconductance - Min:	24 S
Product Type:	MOSFETs
Rise Time:	26 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	19 ns

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Datasheet

IXTQ48N65X2M Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

IXTQ34N65X2M & IXTQ48N65X2M X2-Class Power MOSFETs

IXYS IXTQ34N65X2M and IXTQ48N65X2M X2-Class Power MOSFETs feature a 650V drain-source breakdown voltage and either a 34A or 48A continuous drain current. IXYS IXTQ34N65X2M and IXTQ48N65X2M MOSFETs are N-channel enhancement mode, avalanche-rated devices that operate over a -55°C to +150°C operating temperature range. Applications include switch-mode and resonant-mode power supplies, DC-DC converters, laser drivers, and more.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.