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IXTP94N20X4

Name: IXYS IXTP94N20X4
Brand: IXYS
SKU: 747-IXTP94N20X4
Price: 11.39 EUR
Availability: InStock

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Mouser No:

747-IXTP94N20X4

Mfr. No:

IXTP94N20X4

Mfr.:

IXYS

Description:

MOSFETs TO220 200V 94A N-CH X4CLASS

Datasheet:

IXTP94N20X4 Datasheet (PDF)

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In Stock: 769

Stock:: 769 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	11,39 €	11,39 €
	7,54 €	75,40 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	94 A
Rds On - Drain-Source Resistance:	10.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	77 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	360 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	7 ns
Forward Transconductance - Min:	60 S
Product Type:	MOSFETs
Rise Time:	9 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	97 ns
Typical Turn-On Delay Time:	18 ns
Unit Weight:	2 g

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Datasheet

IXTP94N20X4 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

IXT 200V X4 Ultra Junction Power MOSFETs

IXYS IXT 200V X4 Ultra Junction Power MOSFETs are N-channel enhancement-mode devices with either 10.6mΩ, 13mΩ, or 21mΩ R_DS(on) and a 200V maximum drain-source voltage. The IXT MOSFETs are available in TO-220, TO-247, TO-263, or TO-268 standard package style that is avalanche-rated with high-power density. The IXYS IXT 200V X4 Ultra Junction Power MOSFETs are ideal for use in switch-mode and resonant-mode power supplies.

IX4 Ultra-Junction Power MOSFETs

IXYS IX4 Ultra-Junction Power MOSFETs are avalanche-rated, N-channel enhancement-mode MOSFETs with a 200V drain-source breakdown voltage. The IXYS IX4 Ultra-Junction Power MOSFETs come in a TO-220 (IXTP) or TO-263 (IXTA) package and offer 86A or 94A continuous drain current.