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IXTP86N20X4

Name: IXYS IXTP86N20X4
Brand: IXYS
SKU: 747-IXTP86N20X4
Price: 8.86 EUR
Availability: InStock

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Mouser No:

747-IXTP86N20X4

Mfr. No:

IXTP86N20X4

Mfr.:

IXYS

Description:

MOSFETs Discrete MOSFET 86A 200V X4 TO220

Datasheet:

IXTP86N20X4 Datasheet (PDF)

ECAD Model:

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Learn more about IXYS IXTP86N20X4

In Stock: 674

Stock:: 674 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,86 €	8,86 €
	6,96 €	69,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	86 A
Rds On - Drain-Source Resistance:	13 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	70 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	300 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	35 ns
Forward Transconductance - Min:	50 S
Product Type:	MOSFETs
Rise Time:	38 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	76 ns
Typical Turn-On Delay Time:	27 ns
Unit Weight:	2 g

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Datasheet

IXTP86N20X4 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

IXT 200V X4 Ultra Junction Power MOSFETs

IXYS IXT 200V X4 Ultra Junction Power MOSFETs are N-channel enhancement-mode devices with either 10.6mΩ, 13mΩ, or 21mΩ R_DS(on) and a 200V maximum drain-source voltage. The IXT MOSFETs are available in TO-220, TO-247, TO-263, or TO-268 standard package style that is avalanche-rated with high-power density. The IXYS IXT 200V X4 Ultra Junction Power MOSFETs are ideal for use in switch-mode and resonant-mode power supplies.

IX4 Ultra-Junction Power MOSFETs

IXYS IX4 Ultra-Junction Power MOSFETs are avalanche-rated, N-channel enhancement-mode MOSFETs with a 200V drain-source breakdown voltage. The IXYS IX4 Ultra-Junction Power MOSFETs come in a TO-220 (IXTP) or TO-263 (IXTA) package and offer 86A or 94A continuous drain current.