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IXTP4N70X2M

Name: IXYS IXTP4N70X2M
Brand: IXYS
SKU: 747-IXTP4N70X2M
Price: 4.76 EUR
Availability: InStock

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Mouser No:

747-IXTP4N70X2M

Mfr. No:

IXTP4N70X2M

Mfr.:

IXYS

Datasheet:

ECAD Model:

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More Information

Stock:: 95 Can Dispatch Immediately

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Factory Lead Time:: 41 Weeks Estimated factory production time for quantities greater than shown.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	700 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	850 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	30 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	28 ns
Forward Transconductance - Min:	2.6 S
Product Type:	MOSFETs
Rise Time:	27 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	20 ns