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IXTP3N50D2

Name: IXYS IXTP3N50D2
Brand: IXYS
SKU: 747-IXTP3N50D2
Price: 4.67 EUR
Availability: InStock

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Mouser No:

747-IXTP3N50D2

Mfr. No:

IXTP3N50D2

Mfr.:

IXYS

Description:

MOSFETs N-CH MOSFETS (D2) 500V 3A

Datasheet:

IXTP3N50D2 Datasheet

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Learn more about IXYS IXTP3N50D2

In Stock: 172

Stock:: 172 Can Dispatch Immediately

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	4,67 €	4,67 €
	2,50 €	25,00 €
	2,27 €	227,00 €
	2,18 €	1.090,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	1.5 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	40 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Depletion
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	42 ns
Forward Transconductance - Min:	1.3 S
Product Type:	MOSFETs
Rise Time:	71 ns
Series:	IXTP3N50
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	56 ns
Typical Turn-On Delay Time:	27 ns
Unit Weight:	2 g

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Datasheet

IXTP3N50D2 Datasheet

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TARIC:: 8541900000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8541900299
ECCN:: EAR99

D2 Series N-Channel Depletion Mode Power MOSFETs

IXYS D2 Series 100V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a normally "on" mode, requiring zero turn-on voltage at the gate terminal. IXYS D2 series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously “on," like emergency or burglar alarms.