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IXTP230N04T4M

Name: IXYS IXTP230N04T4M
Brand: IXYS
SKU: 747-IXTP230N04T4M
Price: 3.79 EUR
Availability: OutOfStock

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Mouser No:

747-IXTP230N04T4M

Mfr. No:

IXTP230N04T4M

Mfr.:

IXYS

Description:

MOSFETs Disc MSFT NChTrenchGate-Gen4 TO-220AB/FP

Datasheet:

IXTP230N04T4M Datasheet

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	3,79 €	3,79 €
	2,49 €	24,90 €
	1,86 €	186,00 €
	1,65 €	825,00 €
	1,46 €	1.460,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	230 A
Rds On - Drain-Source Resistance:	2.9 mOhms
Vgs - Gate-Source Voltage:	- 15 V, 15 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	340 W
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	82 ns
Product Type:	MOSFETs
Rise Time:	143 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Typical Turn-Off Delay Time:	85 ns
Typical Turn-On Delay Time:	40 ns
Unit Weight:	2 g

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Datasheet

IXTP230N04T4M Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

40V TrenchT4 Power MOSFETs

IXYS 40V TrenchT4 Power MOSFETs are easy-to-mount N-Channel enhancement MOSFETs housed in international standard packages. The series offers high current handling capability and 175°C maximum operating temperature. These avalanche-rated MOSFETs feature low R_DS(on)and a fast intrinsic rectifier. Typical applications for IXYS 40V TrenchT4 Power MOSFETs include synchronous buck converters, high current switching power supplies, battery-powered electric motors, resonant-mode power supplies, DC-DC converters, offline uninterruptible power supplies (UPS), primary-side switches, and much more.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.