IXTP220N04T2

IXYS
747-IXTP220N04T2
IXTP220N04T2

Mfr.:

Description:
MOSFETs 220 Amps 40V 0.0035 Rds

Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about IXYS IXTP220N04T2

In Stock: 250

Stock:
250 Can Dispatch Immediately
Factory Lead Time:
28 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,29 € 4,29 €
2,06 € 20,60 €
1,92 € 192,00 €
1,90 € 950,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
40 V
220 A
3.5 mOhms
- 20 V, 20 V
2 V
112 nC
- 55 C
+ 175 C
360 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Fall Time: 21 ns
Forward Transconductance - Min: 40 S
Product Type: MOSFETs
Rise Time: 21 ns
Series: IXTP220N04
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 15 ns
Unit Weight: 2 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

This functionality requires JavaScript to be enabled.

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A  (TC=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.