IXTP1R6N50D2

IXYS
747-IXTP1R6N50D2
IXTP1R6N50D2

Mfr.:

Description:
MOSFETs N-CH MOSFETS (D2) 500V 1.6A

ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

In Stock: 251

Stock:
251 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,93 € 3,93 €
2,06 € 20,60 €
1,87 € 187,00 €
1,76 € 880,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
500 V
1.6 A
2.3 Ohms
- 20 V, 20 V
4.5 V
23.7 nC
- 55 C
+ 150 C
100 W
Depletion
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 41 ns
Forward Transconductance - Min: 1.75 S
Product Type: MOSFETs
Rise Time: 70 ns
Series: IXTP1R6N50
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 25 ns
Unit Weight: 2 g
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

D2 Series N-Channel Depletion Mode Power MOSFETs

IXYS D2 Series 100V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a normally "on" mode, requiring zero turn-on voltage at the gate terminal. IXYS D2 series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously “on," like emergency or burglar alarms.