IXTP12N65X2M

IXYS
747-IXTP12N65X2M
IXTP12N65X2M

Mfr.:

Description:
MOSFETs TO220 650V 12A N-CH X2CLASS

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
27 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,42 € 4,42 €
2,94 € 29,40 €
2,05 € 205,00 €
1,98 € 990,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
12 A
300 mOhms
- 30 V, 30 V
2.5 V
- 55 C
+ 150 C
40 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Fall Time: 16 ns
Forward Transconductance - Min: 6.6 S
Product Type: MOSFETs
Rise Time: 24 ns
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 52 ns
Typical Turn-On Delay Time: 23 ns
Unit Weight: 2 g
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Datasheet

PCN

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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

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Off-Highway Electric Vehicle Solutions

Littelfuse provides a wide range of solutions for off-highway electric vehicles. These electric vehicles share a similar architecture and have a power range from 48V to 400V. Off-highway electric vehicles include electric forklifts, golf carts, three-wheelers, tow tractors, compactors, and excavators.

X2-Class Power MOSFETs with HiPerFET™

IXYS X2-Class Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages, including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics and servo controls.

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

Off-Board Charger Sub-Unit Power Converters

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HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

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