IXTP08N100P

Name: IXYS IXTP08N100P
Brand: IXYS
SKU: 747-IXTP08N100P
Price: 3.1 EUR
Availability: InStock

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Mouser No:

747-IXTP08N100P

Mfr. No:

IXTP08N100P

Mfr.:

IXYS

Datasheet:

ECAD Model:

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1 kV
Id - Continuous Drain Current:	800 mA
Rds On - Drain-Source Resistance:	20 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	11.3 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	42 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	34 ns
Product Type:	MOSFETs
Rise Time:	37 ns
Series:	IXTP08N100
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	35 ns
Typical Turn-On Delay Time:	19 ns
Unit Weight:	2 g