IXTP08N100D2

IXYS
747-IXTP08N100D2
IXTP08N100D2

Mfr.:

Description:
MOSFETs N-CH MOSFETS 1000V 800MA

ECAD Model:
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In Stock: 1.843

Stock:
1.843 Can Dispatch Immediately
Factory Lead Time:
32 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
3,16 € 3,16 €
1,60 € 16,00 €
1,44 € 144,00 €
1,37 € 685,00 €
1,25 € 1.250,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
1 kV
800 mA
21 Ohms
- 20 V, 20 V
4 V
14.6 nC
- 55 C
+ 150 C
60 W
Depletion
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 48 ns
Forward Transconductance - Min: 330 mS
Product Type: MOSFETs
Rise Time: 57 ns
Series: IXTP08N100
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 28 ns
Unit Weight: 2 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

D2 Series N-Channel Depletion Mode Power MOSFETs

IXYS D2 Series 100V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a normally "on" mode, requiring zero turn-on voltage at the gate terminal. IXYS D2 series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously “on," like emergency or burglar alarms.