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IXTH6N50D2

Name: IXYS IXTH6N50D2
Brand: IXYS
SKU: 747-IXTH6N50D2
Price: 12.05 EUR
Availability: InStock

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Mouser No:

747-IXTH6N50D2

Mfr. No:

IXTH6N50D2

Mfr.:

IXYS

Description:

MOSFETs N-CH MOSFETS (D2) 500V 6A

Datasheet:

IXTH6N50D2 Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXTH6N50D2

In Stock: 175

Stock:: 175

Can Dispatch Immediately

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On Order:: 300

Expected 2/1/2027
Factory Lead Time:: 32

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	12,05 €	12,05 €
	9,18 €	91,80 €
	7,64 €	916,80 €
	6,72 €	3.427,20 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	550 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	96 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	300 W
Channel Mode:	Depletion
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	43 ns
Forward Transconductance - Min:	2.8 S
Product Type:	MOSFETs
Rise Time:	72 ns
Series:	IXTH6N50
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	82 ns
Typical Turn-On Delay Time:	28 ns
Unit Weight:	6 g

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Datasheet

IXTH6N50D2 Datasheet

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

D2 Series N-Channel Depletion Mode Power MOSFETs

IXYS D2 Series 100V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode devices that operate in a normally "on" mode, requiring zero turn-on voltage at the gate terminal. IXYS D2 series provides blocking voltages up to 1700V and low drain-to-source resistances to provide simplified control and reduced power dissipation in systems that are continuously “on," like emergency or burglar alarms.