IXTH1N170DHV

IXYS
747-IXTH1N170DHV
IXTH1N170DHV

Mfr.:

Description:
MOSFETs TO247 1.7KV 1A N-CH DEPL

ECAD Model:
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In Stock: 907

Stock:
907 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
17,11 € 17,11 €
11,79 € 117,90 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
1.7 kV
1 A
16 Ohms
- 20 V, 20 V
2.5 V
47 nC
- 55 C
+ 150 C
290 W
Depletion
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 216 ns
Product Type: MOSFETs
Rise Time: 38 ns
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 130 ns
Typical Turn-On Delay Time: 46 ns
Unit Weight: 6 g
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

Standard N-Channel Depletion Mode Power MOSFETs

IXYS Standard 500V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode MOSFETs that require a negative gate bias to turn off. The modules remain on at or above zero gate bias voltage but otherwise have similar MOSFET-like characteristics. The series is suitable for level shifting, solid-state relays, current regulators, and active loads.

High Voltage IEEE 1500V+ Discrete Semiconductors Transistors