IXTH12N150

IXYS
747-IXTH12N150
IXTH12N150

Mfr.:

Description:
MOSFETs >1200V High Voltage Power MOSFET

Datasheet:
ECAD Model:
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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
300
Expected 5/8/2026
Factory Lead Time:
32
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
15,51 € 15,51 €
10,72 € 107,20 €
10,01 € 1.201,20 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-247-3
N-Channel
1 Channel
1.5 kV
12 A
2 Ohms
- 30 V, 30 V
4.5 V
106 nC
- 55 C
+ 150 C
890 W
Enhancement
Tube
Brand: IXYS
Configuration: Single
Fall Time: 14 ns
Forward Transconductance - Min: 8 S
Product Type: MOSFETs
Rise Time: 16 ns
Series: IXTH12N150
Factory Pack Quantity: 30
Subcategory: Transistors
Typical Turn-Off Delay Time: 53 ns
Typical Turn-On Delay Time: 26 ns
Unit Weight: 6 g
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Attributes selected: 0

Datasheet

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TARIC:
8541900000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
8541900299
ECCN:
EAR99

High Voltage IEEE 1500V+ Discrete Semiconductors Transistors


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