IXTA80N10T

Name: IXYS IXTA80N10T
Brand: IXYS
SKU: 747-IXTA80N10T
Price: 5.16 EUR
Availability: OutOfStock

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Mouser No:

747-IXTA80N10T

Mfr. No:

IXTA80N10T

Mfr.:

IXYS

Datasheet:

ECAD Model:

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Factory Lead Time:: 23 Weeks Estimated factory production time.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	105 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	14 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	60 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	230 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	48 ns
Forward Transconductance - Min:	33 S
Product Type:	MOSFETs
Rise Time:	54 ns
Series:	IXTA80N10
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	40 ns
Typical Turn-On Delay Time:	31 ns
Unit Weight:	1,600 g