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IXTA60N20X4

Name: IXYS IXTA60N20X4
Brand: IXYS
SKU: 747-IXTA60N20X4
Price: 10.04 EUR
Availability: InStock

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Mouser No:

747-IXTA60N20X4

Mfr. No:

IXTA60N20X4

Mfr.:

IXYS

Description:

MOSFETs 200V, 60A current capacity, Ultra junction X4, TO-263 package, MOSFET

Datasheet:

IXTA60N20X4 Datasheet (PDF)

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In Stock: 512

Stock:: 512 Can Dispatch Immediately

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Factory Lead Time:: 41 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	10,04 €	10,04 €
	5,74 €	57,40 €
	5,33 €	533,00 €
	5,16 €	2.580,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-263-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	21 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Tradename:	X4-Class
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	10 ns
Forward Transconductance - Min:	34 S
Product Type:	MOSFETs
Rise Time:	22 ns
Series:	IXTx60N20X4
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	52 ns
Typical Turn-On Delay Time:	13 ns

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Datasheet

IXTA60N20X4 Datasheet (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

IXT 200V X4 Ultra Junction Power MOSFETs

IXYS IXT 200V X4 Ultra Junction Power MOSFETs are N-channel enhancement-mode devices with either 10.6mΩ, 13mΩ, or 21mΩ R_DS(on) and a 200V maximum drain-source voltage. The IXT MOSFETs are available in TO-220, TO-247, TO-263, or TO-268 standard package style that is avalanche-rated with high-power density. The IXYS IXT 200V X4 Ultra Junction Power MOSFETs are ideal for use in switch-mode and resonant-mode power supplies.