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IXGA30N120B3

Name: IXYS IXGA30N120B3
Brand: IXYS
SKU: 747-IXGA30N120B3
Price: 11.76 EUR
Availability: InStock

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Mouser No:

747-IXGA30N120B3

Mfr. No:

IXGA30N120B3

Mfr.:

IXYS

Description:

IGBTs GenX3 1200V IGBT

Datasheet:

IXGA30N120B3 Datasheet

ECAD Model:

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In Stock: 1.832

Stock:: 1.832 Can Dispatch Immediately

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Factory Lead Time:: 32 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	11,76 €	11,76 €
	8,76 €	87,60 €
	7,29 €	729,00 €
	6,50 €	3.250,00 €
	6,18 €	6.180,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	IGBTs
RoHS:
REACH - SVHC:
Technology:	Si
Package/Case:	D2PAK-3 (TO-263-3)
Mounting Style:	SMD/SMT
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	3.05 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	60 A
Pd - Power Dissipation:	300 W
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXGA30N120
Packaging:	Tube
Brand:	IXYS
Continuous Collector Current Ic Max:	150 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	50
Subcategory:	IGBTs
Tradename:	GenX3
Unit Weight:	2 g

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Datasheet

IXGA30N120B3 Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

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