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IXFX360N10T

Name: IXYS IXFX360N10T
Brand: IXYS
SKU: 747-IXFX360N10T
Price: 12.96 EUR
Availability: InStock

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Mouser No:

747-IXFX360N10T

Mfr. No:

IXFX360N10T

Mfr.:

IXYS

Description:

MOSFETs TRENCH HIPERFET PWR MOSFET 100V 360A

Datasheet:

IXFX360N10T Datasheet

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More Information

Learn more about IXYS IXFX360N10T

In Stock: 831

Stock:: 831 Can Dispatch Immediately

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Factory Lead Time:: 23 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	12,96 €	12,96 €
	8,16 €	81,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	360 A
Rds On - Drain-Source Resistance:	2.9 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	525 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	1.25 mW
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Product Type:	MOSFETs
Series:	IXFX360N10
Factory Pack Quantity:	30
Subcategory:	Transistors
Unit Weight:	6 g

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Datasheet

IXFX360N10T Datasheet

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TARIC:: 8541900000
CNHTS:: 8541210000
CAHTS:: 8541900000
USHTS:: 8541290065
JPHTS:: 8542900006
MXHTS:: 8541900299
ECCN:: EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.