IXFX32N80Q3

IXYS
747-IXFX32N80Q3
IXFX32N80Q3

Mfr.:

Description:
MOSFETs Q3Class HiPerFET Pwr MOSFET 800V/32A

ECAD Model:
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In Stock: 298

Stock:
298 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 298 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
23,04 € 23,04 €
20,88 € 208,80 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
800 V
32 A
270 mOhms
- 30 V, 30 V
140 nC
+ 150 C
1 kW
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Product Type: MOSFETs
Rise Time: 300 ns
Series: IXFX32N80
Factory Pack Quantity: 30
Subcategory: Transistors
Transistor Type: 1 N-Channel
Unit Weight: 6 g
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TARIC:
8541900000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
8541900299
ECCN:
EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Q3-Class HiperFET™ Power MOSFETs

IXYS Q3-Class HiperFET™ Power MOSFETs provide the end-user with a broad range of devices with exceptional power-switching performance. They also offer excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. These MOSFETs come with drain-to-source voltage ratings of 200V to 1000V and drain current ratings of 10A to 100A. These features make the Q3-Class an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), substantially reducing the device's conduction and switching loss. Power switching capabilities and device ruggedness are further enhanced by utilizing the HiperFET process. This process yields a device with a fast intrinsic rectifier, which provides for a low reverse recovery charge (Qrr) while enhancing the device's commutating dv/dt ratings (up to 50V/ns).

HiPerFET Power MOSFETs

IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all .