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IXFR4N100Q

Name: IXYS IXFR4N100Q
Brand: IXYS
SKU: 747-IXFR4N100Q
Price: 14.36 EUR
Availability: OutOfStock

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Mouser No:

747-IXFR4N100Q

Mfr. No:

IXFR4N100Q

Mfr.:

IXYS

Description:

MOSFETs 3.5 Amps 1000V 3 Rds

Datasheet:

IXFR4N100Q Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXFR4N100Q

Availability

Stock:: Non-Stocked

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Factory Lead Time:: 37 Weeks Estimated factory production time.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	14,36 €	14,36 €
	10,94 €	109,40 €
	7,59 €	910,80 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1 kV
Id - Continuous Drain Current:	3.5 A
Rds On - Drain-Source Resistance:	3 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	80 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	18 ns
Product Type:	MOSFETs
Rise Time:	15 ns
Series:	IXFR4N100
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	32 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	6 g

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Datasheet

IXFR4N100Q Datasheet

PCN

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Compliance Codes

TARIC:: 8541500000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85415001
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

Q-Class HiPerFET™ Power MOSFETs

IXYS Q-Class HiPerFET™ Power MOSFETs are designed for hard switching and resonant mode applications. They offer low gate charge, excellent ruggedness, and a fast intrinsic diode. The IXYS Q-Class HiPerFET™ Power MOSFETs are available in many standard industrial packages, including isolated types.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.