IXFQ80N25X3

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See Product Specifications

Mouser No:

747-IXFQ80N25X3

Mfr. No:

IXFQ80N25X3

Mfr.:

IXYS

Lifecycle:

Obsolete

Datasheet:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
Delivery Restrictions:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3P-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	16 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	83 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	290 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	8 ns
Forward Transconductance - Min:	38 S
Product Type:	MOSFETs
Rise Time:	17 ns
Series:	IXFQ80N25X3
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	30 ns

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