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IXFP8N65X2

Name: IXYS IXFP8N65X2
Brand: IXYS
SKU: 747-IXFP8N65X2
Price: 4.99 EUR
Availability: OutOfStock

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Mouser No:

747-IXFP8N65X2

Mfr. No:

IXFP8N65X2

Mfr.:

IXYS

Datasheet:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	8 A
Rds On - Drain-Source Resistance:	450 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	11 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	15 ns
Forward Transconductance - Min:	3.6 S
Product Type:	MOSFETs
Rise Time:	11 ns
Series:	650V Ultra Junction X2
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	17 ns
Unit Weight:	2 g