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IXFP12N65X2M

Name: IXYS IXFP12N65X2M
Brand: IXYS
SKU: 747-IXFP12N65X2M
Price: 5.67 EUR
Availability: OutOfStock

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Mouser No:

747-IXFP12N65X2M

Mfr. No:

IXFP12N65X2M

Mfr.:

IXYS

Description:

MOSFETs 650V/12A OVERMOLDED TO-220

Datasheet:

IXFP12N65X2M Datasheet

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 27 Weeks Estimated factory production time.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,67 €	5,67 €
	3,72 €	37,20 €
	2,73 €	273,00 €
	2,15 €	1.075,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	12 A
Rds On - Drain-Source Resistance:	310 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	18.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	40 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	12 ns
Forward Transconductance - Min:	4.8 S
Product Type:	MOSFETs
Rise Time:	26 ns
Series:	650V Ultra Junction X2
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	27 ns
Unit Weight:	2 g

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Datasheet

IXFP12N65X2M Datasheet

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Origin Classifications

Country of Origin:: Korea, Republic of
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

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