IXFN62N80Q3

Name: IXYS IXFN62N80Q3
Brand: IXYS
SKU: 747-IXFN62N80Q3
Price: 68.5 EUR
Availability: InStock

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Mouser No:

747-IXFN62N80Q3

Mfr. No:

IXFN62N80Q3

Mfr.:

IXYS

Datasheet:

ECAD Model:

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Stock:: 192 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 192 will be subject to minimum order requirements.

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	49 A
Rds On - Drain-Source Resistance:	140 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	960 W
Series:	IXFN62N80
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Product Type:	MOSFET Modules
Rise Time:	300 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	HiperFET
Unit Weight:	30 g