It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXFN360N10T

Name: IXYS IXFN360N10T
Brand: IXYS
SKU: 747-IXFN360N10T
Price: 24.56 EUR
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXFN360N10T

Mfr. No:

IXFN360N10T

Mfr.:

IXYS

Description:

MOSFET Modules 360 Amps 100V

Datasheet:

IXFN360N10T Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXFN360N10T

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
On Order:: 620

Expected 7/27/2026

765

445

Expected 8/4/2026

320

Expected 9/1/2026
Factory Lead Time:: 23

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	24,56 €	24,56 €
	18,93 €	189,30 €
	18,45 €	1.845,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	360 A
Rds On - Drain-Source Resistance:	2.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	830 W
Series:	IXFN360N10
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Fall Time:	160 ns
Product Type:	MOSFET Modules
Rise Time:	100 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	Power MOSFET
Typical Turn-Off Delay Time:	80 ns
Typical Turn-On Delay Time:	47 ns
Unit Weight:	30 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXFN360N10T Datasheet

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8504901900
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.