IXFN32N120P

IXYS
747-IXFN32N120P
IXFN32N120P

Mfr.:

Description:
MOSFET Modules 32 Amps 1200V

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Availability

Stock:
0

You can still purchase this product for backorder.

On Order:
589
Expected 5/8/2026
Factory Lead Time:
66
Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
67,66 € 67,66 €
57,85 € 578,50 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFET Modules
RoHS:  
Si
Screw Mount
SOT-227-4
N-Channel
1 Channel
1.2 kV
32 A
310 mOhms
- 30 V, + 30 V
6.5 V
- 55 C
+ 150 C
1 kW
HiPerFET
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 58 ns
Height: 12.22 mm
Length: 38.23 mm
Product Type: MOSFET Modules
Rise Time: 62 ns
Factory Pack Quantity: 10
Subcategory: Discrete and Power Modules
Tradename: HiPerFET
Type: Polar HiPerFET Power MOSFET
Typical Turn-Off Delay Time: 88 ns
Typical Turn-On Delay Time: 70 ns
Width: 25.42 mm
Unit Weight: 30 g
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TARIC:
8541500000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85415001
ECCN:
EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest RDS(on), low RthJC, low Qg, and enhanced dv/dt capability.