IXFN30N120P

IXYS
747-IXFN30N120P
IXFN30N120P

Mfr.:

Description:
Discrete Semiconductor Modules 30 Amps 1200V 0.35 Rds

ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
22 Weeks Estimated factory production time.
Minimum: 300   Multiples: 10
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
56,56 € 16.968,00 €

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: Discrete Semiconductor Modules
RoHS:  
Si
- 30 V, + 30 V
Screw Mount
SOT-227-4
- 55 C
+ 150 C
IXFN30N120
Tube
Brand: IXYS
Configuration: Single
Fall Time: 56 ns
Id - Continuous Drain Current: 30 A
Pd - Power Dissipation: 890 W
Product Type: Discrete Semiconductor Modules
Rds On - Drain-Source Resistance: 350 mOhms
Rise Time: 60 ns
Factory Pack Quantity: 10
Subcategory: Discrete Semiconductor Modules
Tradename: HiPerFET
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 95 ns
Typical Turn-On Delay Time: 57 ns
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Unit Weight: 30 g
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Compliance Codes
TARIC:
8541500000
CNHTS:
8541590000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85415001
ECCN:
EAR99
Origin Classifications
Country of Origin:
Korea, Republic of
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

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