IXFN26N100P

Name: IXYS IXFN26N100P
Brand: IXYS
SKU: 747-IXFN26N100P
Price: 44.02 EUR
Availability: OutOfStock

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Mouser No:

747-IXFN26N100P

Mfr. No:

IXFN26N100P

Mfr.:

IXYS

Description:

Discrete Semiconductor Modules 26 Amps 1000V 0.39 Rds

Datasheet:

IXFN26N100P Datasheet

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 27 Weeks Estimated factory production time.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	44,02 €	13.206,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	Discrete Semiconductor Modules
RoHS:
Technology:	Si
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Series:	IXFN26N100
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	50 ns
Id - Continuous Drain Current:	23 A
Pd - Power Dissipation:	595 W
Product Type:	Discrete Semiconductor Modules
Rds On - Drain-Source Resistance:	390 mOhms
Rise Time:	45 ns
Factory Pack Quantity:	10
Subcategory:	Discrete Semiconductor Modules
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	72 ns
Typical Turn-On Delay Time:	45 ns
Vds - Drain-Source Breakdown Voltage:	1 kV
Unit Weight:	30 g

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Datasheet

IXFN26N100P Datasheet

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TARIC:: 8541500000
CNHTS:: 8541590000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85415001
ECCN:: EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.